Evaluation of Hafnium and Tantalum Nitride Thin Films Prepared by Magnetron Sputter Deposition with a Nitride Target.

DOI Web Site 6 References
  • GOTOH Yasuhito
    Department of Electronic Science and Engineering, Kyoto University
  • KIWA Nobumasa
    Department of Electronic Science and Engineering, Kyoto University
  • TSUJI Hiroshi
    Department of Electronic Science and Engineering, Kyoto University
  • ISHIKAWA Junzo
    Department of Electronic Science and Engineering, Kyoto University

Bibliographic Information

Other Title
  • 窒化物ターゲットを用いた高周波スパッタリング法によるハフニウム及びタンタル窒化物薄膜の形成と評価
  • チッカブツ ターゲット オ モチイタ コウシュウハ スパッタリングホウ ニ ヨル ハフニウム オヨビ タンタル チッカブツ ハクマク ノ ケイセイ ト ヒョウカ

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Abstract

We have prepared hafnium and tantalum nitride thin films by magnetron sputter deposition and evaluated their properties. Unlike the common preparation method of the nitride, that is, reactive sputtering, we adopted the direct sputtering of nitride target by pure argon plasma. The nitrogen concentration of the films was approximately the same with the target for hafnium nitride, but was slightly lower than the target for tantalum nitride. The film properties such as crystallinity and work function was measured.

Journal

  • Shinku

    Shinku 45 (3), 309-312, 2002

    The Vacuum Society of Japan

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