窒化物ターゲットを用いた高周波スパッタリング法によるハフニウム及びタンタル窒化物薄膜の形成と評価  [in Japanese] Evaluation of Hafnium and Tantalum Nitride Thin Films Prepared by Magnetron Sputter Deposition with a Nitride Target  [in Japanese]

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Author(s)

    • 後藤 康仁 GOTOH Yasuhito
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Kyoto University
    • 紀和 伸政 KIWA Nobumasa
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Kyoto University
    • 辻 博司 [他] TSUJI Hiroshi
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Kyoto University
    • 石川 順三 ISHIKAWA Junzo
    • 京都大学大学院工学研究科電子物性工学専攻 Department of Electronic Science and Engineering, Kyoto University

Abstract

We have prepared hafnium and tantalum nitride thin films by magnetron sputter deposition and evaluated their properties. Unlike the common preparation method of the nitride, that is, reactive sputtering, we adopted the direct sputtering of nitride target by pure argon plasma. The nitrogen concentration of the films was approximately the same with the target for hafnium nitride, but was slightly lower than the target for tantalum nitride. The film properties such as crystallinity and work function was measured.

Journal

  • Shinku

    Shinku 45(3), 309-312, 2002-03-20

    The Vacuum Society of Japan

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Codes

  • NII Article ID (NAID)
    10008203193
  • NII NACSIS-CAT ID (NCID)
    AN00119871
  • Text Lang
    JPN
  • Article Type
    SHO
  • ISSN
    05598516
  • NDL Article ID
    6144770
  • NDL Source Classification
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL Call No.
    Z16-474
  • Data Source
    CJP  NDL  J-STAGE 
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