高速成長4H-SiCエピタキシャル単結晶膜を用いた高電圧ショットキーダイオードの開発  [in Japanese] Fabrication of high-voltage 4H-SiC Schottky barrier diodes using epitaxial layers obtained at a high growth rate  [in Japanese]

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Abstract

High-voltage Schottky barrier diodes (SBDs) are fabricated on 4H-SiC epitaxial layers obtained at a high growth rate (14_??_16μm/h). The epitaxial layers are grown in a vertical radiant-heating reactor, with pre-growth and growth conditions controlled to reduce morphological defects. A good morphology with a low density of growth pits is achieved by applying to substrates pre-growth hydrogen etching under reduced pressure down to 4000Pa. Two types of edge termination structures, B-implanted termination and junction termination extension (JTE), were tested for use in fabricating high-voltage 4H-SiC SBDs. A high blocking voltage of 1.2kV was achieved when using a 10μm-thick layer by applying B-implanted termination, despite the layer being grown in only 40 minutes. When using 27pm-thick epitaxial layers, a 2.4kV-9.1 mΩcm<sup>2</sup> SBD with B-implanted termination and 3.4kV-16.0 mΩcm<sup>2</sup> SBD with JTE were successfully fabricated. We also succeeded in obtaining a 4 mmφ diode with an allowable leakage current, and a high yield rate exceeding 90% for the 1 mmφ diodes.

Journal

  • IEEJ Transactions on Power and Energy

    IEEJ Transactions on Power and Energy 122(5), 637-643, 2002-05-01

    The Institute of Electrical Engineers of Japan

References:  24

Codes

  • NII Article ID (NAID)
    10008217068
  • NII NACSIS-CAT ID (NCID)
    AN10136334
  • Text Lang
    JPN
  • Article Type
    ART
  • ISSN
    03854213
  • NDL Article ID
    6152920
  • NDL Source Classification
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL Call No.
    Z16-794
  • Data Source
    CJP  NDL  J-STAGE 
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