SOI基板上に形成した二重注入型磁気ダイオード  [in Japanese] Double Injection Type Magnetodiode Formed on a SOI Substrate  [in Japanese]

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Author(s)

Abstract

Semiconductor magnetodiode with very small size, which has similar operation-principle to the SMD (Sony magnetodiode), has been fabricated on a thin Si film of SOI substrate and its fundamental characteristics are evaluated. This magnetodiode is able to fabricate together with ICs such as amplifier, driving circuits, compensation circuits, etc. using the update semiconductor IC technologies on a Si chip. Double injection in this magnetodiode is confirmed, and the magnetic sensitivity of ΔI/I<SUB>0</SUB>∼=10% at H=1kOe is obtained in this double injection regime even under non-optimized conditions.

Journal

  • IEEJ Transactions on Sensors and Micromachines

    IEEJ Transactions on Sensors and Micromachines 122(5), 280-284, 2002-05-01

    The Institute of Electrical Engineers of Japan

References:  8

Cited by:  1

Codes

  • NII Article ID (NAID)
    10008218952
  • NII NACSIS-CAT ID (NCID)
    AN1052634X
  • Text Lang
    JPN
  • Article Type
    Journal Article
  • ISSN
    13418939
  • NDL Article ID
    6152670
  • NDL Source Classification
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL Call No.
    Z16-B380
  • Data Source
    CJP  CJPref  NDL  J-STAGE 
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