Double Injection Type Magnetodiode Formed on a SOI Substrate

• Takeyama Hiroshi

  Tohoku-Gakuin Univ.

• Senoo Kazutaka

  Tohoku-Gakuin Univ.

• Otuki Takashi

  Tokin Corporation

• Kimura Mitsuteru

  Tohoku-Gakuin Univ.

Bibliographic Information

Other Title

• SOI基板上に形成した二重注入型磁気ダイオード
• SOI キバン ジョウ ニ ケイセイ シタ ニジュウ チュウニュウガタ ジキ ダイオード

Abstract

Semiconductor magnetodiode with very small size, which has similar operation-principle to the SMD (Sony magnetodiode), has been fabricated on a thin Si film of SOI substrate and its fundamental characteristics are evaluated. This magnetodiode is able to fabricate together with ICs such as amplifier, driving circuits, compensation circuits, etc. using the update semiconductor IC technologies on a Si chip. Double injection in this magnetodiode is confirmed, and the magnetic sensitivity of ΔI/I₀∼=10% at H=1kOe is obtained in this double injection regime even under non-optimized conditions.

Journal

• IEEJ Transactions on Sensors and Micromachines

  IEEJ Transactions on Sensors and Micromachines 122 (5), 280-284, 2002

  The Institute of Electrical Engineers of Japan

Keywords

• double injection
• magnetic sensor
• Si
• SOI
• pin diode

Details

• CRID: 1390001204461902976
• NII Article ID: 10008218952
• NII Book ID: AN1052634X
• DOI: 10.1541/ieejsmas.122.280
• ISSN: 13475525
• ISSN: 13418939
• ISSN: http://id.crossref.org/issn/13418939
• NDL BIB ID: 6152670
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6152670
• Web Site: https://www.jstage.jst.go.jp/article/ieejsmas/122/5/122_5_280/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed