欠陥生成を取り入れた薄膜成長のモンテカルロシミュレーション : 孔埋め込みへの応用  [in Japanese] Monte Carlo Simulation of Thin Film Growth with Defect Formation : Application to Via Filling  [in Japanese]

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Author(s)

Abstract

Monte Carlo simulations of via filling have been performed using the lattice model of crystal growth, which allows vacancy formation in the film during the growth. Adsorption, desorption and surface diffusion of adatoms are taken into account. Using a two-dimensional model, we examined the film growth from the initial surface with hollow parts (wedge-shaped and flat-bottomed holes), the aspect ratio of which ranged from 0.5 to 4. When a wedge-shaped hole is filled with deposited atoms, small voids appear in the film, which are aligned in the growth direction. In the case of the flat-bottomed hole, on the other hand, large voids with several hundred vacant sites appear in the middle of the hole. The voids are elongated in the growth direction as the aspect ratio becomes large. These voids have a similar structure to those of the experiment of filling vias and trenches in Cu interconnections from the solution without additives. The mechanism of the void formation is discussed in relation to the aspect ratio and the overpotential.

Journal

  • Journal of The Surface Finishing Society of Japan

    Journal of The Surface Finishing Society of Japan 53(4), 250-255, 2002-04-01

    The Surface Finishing Society of Japan

References:  12

  • <no title>

    金子豊

    表面技術 51, 81, 2000

    Cited by (2)

  • <no title>

    KANEKO Y.

    J. Phys. Soc. Japan 69, 3607, 2000

    Cited by (1)

  • <no title>

    ANDRICACOS P. C.

    IBM J.Res.Develop. 42, 567, 1998

    Cited by (12)

  • <no title>

    WEST A. C.

    J. Electrochem. Soc. 147, 227, 2000

    Cited by (2)

  • <no title>

    IRISAWA T.

    J. Crystal Growth 99, 491, 1990

    Cited by (4)

  • <no title>

    BORTZ A. B.

    J. Comput. Phys. 17, 10, 1975

    Cited by (6)

  • <no title>

    塚田捷編

    表面における理論I 177, 1995

    Cited by (1)

  • <no title>

    黒田司

    結晶 表面の基礎物性 71, 1993

    Cited by (2)

  • <no title>

    MOFFAT J. P.

    J. Electrochem. Soc. 147, 4524, 2000

    DOI  Cited by (7)

  • <no title>

    GILMER G. H.

    J. Crystal Growth 13/14, 148, 1972

    DOI  Cited by (4)

  • <no title>

    GILMER G. H.

    J. Appl. Phys. 43, 1347, 1972

    DOI  Cited by (14)

  • <no title>

    MATSUMOTO M.

    ACM Trans. on Modeling and Computer Simulation 4, 254, 1994

    DOI  Cited by (1)

Cited by:  1

Codes

  • NII Article ID (NAID)
    10008222324
  • NII NACSIS-CAT ID (NCID)
    AN1005202X
  • Text Lang
    JPN
  • Article Type
    Journal Article
  • ISSN
    09151869
  • NDL Article ID
    6144022
  • NDL Source Classification
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL Call No.
    Z17-291
  • Data Source
    CJP  CJPref  NDL  J-STAGE 
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