Isotopically Controlled Semiconductors

Search this Article

Author(s)

Journal

  • Journal of Nuclear Science and Technology

    Journal of Nuclear Science and Technology 39(4), 382-385, 2002-04-25

    Atomic Energy Society of Japan

References:  30

  • <no title>

    FUCHS H. D.

    Solid State Commun. 82, 225, 1992

    Cited by (1)

  • <no title>

    SPITZER J.

    Phys. Rev. Lett. 72, 1565, 1994

    Cited by (3)

  • <no title>

    MORITA K.

    Proc. Int. Joint Conf. on Silicon Epitaxy and Heterostructures (IJC-Si), 1999

    Cited by (1)

  • <no title>

    JUSSERAND B.

    Light Scattering in Solids V, 49-152, 1989

    Cited by (1)

  • <no title>

    MOLINAS-MATA P.

    Phys. Rev. B 43, 9799, 1991

    Cited by (1)

  • <no title>

    POMERANCHUK I.

    J.Phys.(Moscow) 6, 237, 1942

    Cited by (2)

  • <no title>

    GEBALLE T. H.

    Phys.Rev. 110, 773, 1958

    Cited by (2)

  • <no title>

    WEI L.

    Phys.Rev.Lett. 70, 3764, 1993

    Cited by (3)

  • <no title>

    RUF T.

    Solid State Commun. 115, 243, 2000

    Cited by (5)

  • <no title>

    HOLLOWAY H.

    Phys. Rev. B 44, 7123, 1991

    Cited by (1)

  • <no title>

    Proc Fourth Int. Conf. on Neutron Transmutation Doping of Semiconductor Materials, National Bureau of Standards, 1984

    Cited by (1)

  • <no title>

    HALLER . E. E.

    Proc Fourth Int. Conf. on Neutron Transmutation Doping of Semiconductor Materials, National Bureau of Standards, 21-36, 1984

    Cited by (1)

  • <no title>

    KREYSA E.

    Infrared Phys. Technol. 40, 191, 1999

    Cited by (1)

  • <no title>

    LANGE A. E.

    Phys. Rev. D 63, 42001, 2001

    Cited by (1)

  • <no title>

    HOLLAND W. S.

    Int. J. Infrared MM Waves 17, 669, 1996

    Cited by (1)

  • <no title>

    ITOH K. M.

    Phys. Rev. Lett. 77, 4058, 1996

    Cited by (6)

  • <no title>

    WATANABE M.

    Phys. Rev. B 58, 9851, 1998

    Cited by (4)

  • <no title>

    SHKLOVSKII B. I.

    Electronic Properties of Doped Semiconductors, Solid State Series 45, 1984

    Cited by (1)

  • <no title>

    BRACHT H.

    Appl. Phys. Lett. 74, 49, 1999

    Cited by (2)

  • <no title>

    BRACHT H.

    Solid State Commun. 112, 301, 1999

    Cited by (2)

  • <no title>

    BRACHT H.

    Phys. Rev. Lett. 81, 393, 1998

    Cited by (10)

  • <no title>

    SILVEIRA E.

    Proc. Eighth Int. Conf. on Modulated Semiconductor Structures MSS8, 1997

    Cited by (1)

  • <no title>

    WANG Lei

    Appl. Phys. Lett. 70, 1831, 1997

    Cited by (1)

  • <no title>

    BRACHT H.

    Nature 408, 69, 2000

    Cited by (2)

  • <no title>

    NAKAJIMA M.

    Phys. Rev. B 63, R161304, 2001

    Cited by (2)

  • <no title>

    BUSCHERT R. C.

    Phys. Rev. B 38, 5219, 1988

    DOI  Cited by (1)

  • <no title>

    OZHOGIN V. I.

    J. Exper. Theor. Phys. 88, 135, 1999

    DOI  Cited by (2)

  • <no title>

    PARKS C.

    Phys. Rev. B 49, 14244, 1994

    DOI  Cited by (2)

  • <no title>

    WATANABE M.

    Phys. Rev. B 60, 15817, 1999

    DOI  Cited by (4)

  • <no title>

    FUCHS H. D.

    Phys. Rev. B 51, 16817, 1995

    DOI  Cited by (4)

Codes

  • NII Article ID (NAID)
    10008227342
  • NII NACSIS-CAT ID (NCID)
    AA00703720
  • Text Lang
    ENG
  • Article Type
    REV
  • ISSN
    00223131
  • NDL Article ID
    6146549
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z53-A460
  • Data Source
    CJP  NDL 
Page Top