TUNNELING REACTION OF H ATOMS WITH SILANE THIN FILM AT CRYOGENIC TEMPERATURE : FROMATION OF THIN-FILM SEMICONDUCTOR

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Author(s)

    • SATO T.
    • Clean Energy Research Center, Ymamanashi University
    • SATO S.
    • Clean Energy Research Center, Ymamanashi University
    • HISHIKI S.
    • Clean Energy Research Center, Ymamanashi University
    • SUZUKI K.
    • Clean Energy Research Center, Ymamanashi University
    • YOKOYAMA T.
    • Clean Energy Research Center, Ymamanashi University
    • KITAGAWA S.
    • Clean Energy Research Center, Ymamanashi University
    • HIRAOKA K.
    • Clean Energy Research Center, Ymamanashi University

Journal

  • Atomic collision research in Japan

    Atomic collision research in Japan 27, 88, 2001-12-15

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    DOI  Cited by (4)

Codes

  • NII Article ID (NAID)
    10008431536
  • NII NACSIS-CAT ID (NCID)
    AA11068271
  • Text Lang
    ENG
  • Article Type
    ART
  • Data Source
    CJP 
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