AlGaN/GaNヘテロ構造の諸特性と高電子移動度トランジスター  [in Japanese] Investigations on AlGaN/GaN Hetero-Structures and High Electron Mobility Transistor  [in Japanese]

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Author(s)

Journal

  • The Transactions of the Institute of Electrical Engineers of Japan. C

    The Transactions of the Institute of Electrical Engineers of Japan. C 122(6), 910-915, 2002-06-01

    電気学会

References:  15

Codes

  • NII Article ID (NAID)
    10008508924
  • NII NACSIS-CAT ID (NCID)
    AN10065950
  • Text Lang
    JPN
  • Article Type
    OTR
  • ISSN
    03854221
  • NDL Article ID
    6174740
  • NDL Source Classification
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL Call No.
    Z16-795
  • Data Source
    CJP  NDL 
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