IGBT(Insulated Gate Bipolar Transistor)の開発経緯  [in Japanese] Details of development for IGBT  [in Japanese]

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Author(s)

Journal

  • The Transactions of the Institute of Electrical Engineers of Japan. C

    The Transactions of the Institute of Electrical Engineers of Japan. C 122(6), 1074-1076, 2002-06-01

    電気学会

References:  4

  • <no title>

    BALIGA B. J.

    IEEE IEDM Tech. Digest 264, 1982

    Cited by (1)

  • <no title>

    GOODMAN A. M.

    IEEE EDL. EDL-4 63, 1983

    Cited by (1)

  • <no title>

    CHANG M. F.

    IEEE IEDM Tech. Digest 83, 1983

    Cited by (1)

  • <no title>

    関康和

    富士時報 74(2), 103, 2001

    Cited by (1)

Cited by:  1

Codes

  • NII Article ID (NAID)
    10008509220
  • NII NACSIS-CAT ID (NCID)
    AN10065950
  • Text Lang
    JPN
  • Article Type
    Journal Article
  • ISSN
    03854221
  • NDL Article ID
    6175091
  • NDL Source Classification
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL Call No.
    Z16-795
  • Data Source
    CJP  CJPref  NDL 
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