Si超微粒子を用いたELデバイスからの発光特性の改善  [in Japanese] Improvement of Light Emission from Electroluminescent Device using Nanocrystalline Silicon  [in Japanese]

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Abstract

Electroluminescent device (ELD) using nanocrystalline silicon (nc-Si) was fabricated by annealing of co-sputtering of Si and silicon dioxide (SiO<SUB>2</SUB>) targets and subsequently hydrofluoric (HF) acid solution treatment. The HF treatment made effective electron injection into the nc-Si and the resultant decrease in resistance of the ELD. The HF treatment also made P<SUB>b</SUB>-center, which act as a role of non-radiative recombination center, compensate with hydrogen atoms. From above effects of the HF treatment, the HF-treated ELD emits high efficiency red light with external quantum efficiency of 0.35% under low operating voltage of +4.5 V. Moreover, intensity of the red light emission from the HF-treated ELD is stable for continuous operation above 10 days (operating time of 15000 min).

Journal

  • IEEJ Transactions on Fundamentals and Materials

    IEEJ Transactions on Fundamentals and Materials 122(6), 616-623, 2002-06-01

    The Institute of Electrical Engineers of Japan

References:  38

Cited by:  3

Codes

  • NII Article ID (NAID)
    10008510279
  • NII NACSIS-CAT ID (NCID)
    AN10136312
  • Text Lang
    JPN
  • Article Type
    Journal Article
  • ISSN
    03854205
  • NDL Article ID
    6175005
  • NDL Source Classification
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL Call No.
    Z16-793
  • Data Source
    CJP  CJPref  NDL  J-STAGE 
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