-
- Kawahara Toshio
- Department of Materials Science and Engineering, National Defense Academy
-
- Ohbuchi Yasuhiro
- Department of Materials Science and Engineering, National Defense Academy
-
- Kimura Akitsugu
- Department of Materials Science and Engineering, National Defense Academy
-
- Okamoto Yoichi
- Department of Materials Science and Engineering, National Defense Academy
-
- Morimoto Jun
- Department of Materials Science and Engineering, National Defense Academy
この論文をさがす
抄録
PA spectra with several sintering temperatures on the Bi doped and Pr doped ZnO varistors were measured using the gas microphone method and compared, where the grain structure was observed by the laser microscope. The PA signals in the long wavelength excitaion light decreased as the sintering temperature increased, although the PA signals were large at the short wavelength region on the all samples. The PA signal intensity seems not to depend on the surface area caused by the grain structure change, but it might also relate to the quality of the sintered samples such as the deep levels or defects in the grain. The Pr doped samples need the higher sintering temperature to get the high quality samples than the Bi doped samples.
収録刊行物
-
- 粉体および粉末冶金
-
粉体および粉末冶金 49 (5), 355-359, 2002
一般社団法人 粉体粉末冶金協会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001206306963840
-
- NII論文ID
- 10008559477
-
- NII書誌ID
- AN00222724
-
- ISSN
- 18809014
- 05328799
-
- NDL書誌ID
- 6169257
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可