XAFS測定の半導体への応用  [in Japanese] Application of XAFS Measurements to the Study of Semiconductors  [in Japanese]

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Author(s)

    • 大渕 博宣 OFUCHI Hironori
    • 名古屋大学大学院工学研究科材料機能工学専攻 Department of Materials Science and Engineering Graduate School of Engineering, Nagoya University
    • 田渕 雅夫 TABUCHI Masao
    • 名古屋大学大学院工学研究科材料機能工学専攻 Department of Materials Science and Engineering Graduate School of Engineering, Nagoya University
    • 竹田 美和 TAKEDA Yoshikazu
    • 名古屋大学大学院工学研究科材料機能工学専攻 Department of Materials Science and Engineering Graduate School of Engineering, Nagoya University

Abstract

We demonstrated that fluorescence XAFS measurements can reveal the local structures around dilute elements in thin semiconductor layers. In the GaAs samples doped with Er and O, majority of the Er atoms substituted Ga sublattices with adjacent two O atoms and two As atoms (Er-2O center). In the GaInN/GaN samples, it was shown that the segregation of InN phase occurred in the GaInN layer at a higher In-content (<I>x</I> = 0.30), although the segregation was not observed at a lower In-content (<I>x</I> = 0.05). XANES spectrum in the Tb-implanted SiO<Sub>2</Sub> sample was observed by detecting X-ray-excited visible luminescence. The spectrum was quite similar to that was measured by detecting fluorescence X-ray.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 23(6), 367-373, 2002-06-10

    The Surface Science Society of Japan

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Codes

  • NII Article ID (NAID)
    10008563790
  • NII NACSIS-CAT ID (NCID)
    AN00334149
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    03885321
  • NDL Article ID
    6184712
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z15-379
  • Data Source
    CJP  NDL  J-STAGE 
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