デバイスモデルと回路シミュレーション  [in Japanese] Device model and its applications for circuit simulation  [in Japanese]

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Author(s)

Journal

  • 應用物理

    應用物理 71(6), 726-730, 2002-06-10

    応用物理学会

References:  3

  • <no title>

    TSIVIDIS Y.

    Operation and modeling of the MOS Transistor, 1999

    Cited by (6)

  • <no title>

    http://home. hiroshima-u.ac.jp/usdl/HiSIM.shtml

    Cited by (2)

  • <no title>

    http://www-vice.eecs.berkeley.edu/〜bsim3/bsim4.html

    Cited by (1)

Codes

  • NII Article ID (NAID)
    10008644060
  • NII NACSIS-CAT ID (NCID)
    AN00026679
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    03698009
  • NDL Article ID
    6177901
  • NDL Source Classification
    ZM17(科学技術--科学技術一般--力学・応用力学)
  • NDL Call No.
    Z15-243
  • Data Source
    CJP  NDL 
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