レーザー材料として見た半導体 : (In)AlGaN窒化物混晶の結晶成長と300nm帯紫外高輝度LEDへの応用  [in Japanese] Growth of (In)AlGaN Compound Semiconductors and their Application to 30-nm-Band High-Intensity UV-LEDs  [in Japanese]

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Author(s)

Journal

  • The Review of laser engineering

    The Review of laser engineering 30(6), 308-314, 2002-06-15

    レ-ザ-学会

References:  20

  • <no title>

    天野浩

    応用物理 68, 768, 1999

    Cited by (10)

  • <no title>

    NAKAMURA S.

    Jpn. J. Appl. Phys. 36, L1568, 1997

    Cited by (75)

  • <no title>

    GOTO S.

    28^<th> International Symposium on Compound Semiconductors (ISCS2001), TuA-4, 2001

    Cited by (2)

  • <no title>

    HIRAYAMA H.

    The Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICOMVPE-X'2000), Fr-A8, 2000

    Cited by (1)

  • <no title>

    HIRAYAMA H.

    GaN and Related Alloys, Mater. Res. Soc. 639, G28, 2001

    Cited by (2)

  • <no title>

    HIRAYAMA H.

    GaN and Related Alloys, Mater. Res. Soc. 639, G28, 2001

    Cited by (2)

  • <no title>

    奥山浩之

    応用物理 65, 687, 1996

    Cited by (8)

  • <no title>

    堀内賢治

    応用物理 70, 1317, 2001

    Cited by (2)

  • <no title>

    KINOSHITA A.

    Appl. Phys. Lett. 77, 175, 2000

    Cited by (9)

  • <no title>

    NISHIDA T.

    Appl. Phys. Lett. 78, 3927, 2001

    Cited by (17)

  • <no title>

    NAGAHAMA S.

    Jpn. J. Appl. Phys. 40, L3075, 2001

    Cited by (24)

  • <no title>

    NAGAHAMA S.

    Jpn. J. Appl. Phys. 40, L3075, 2001

    Cited by (24)

  • <no title>

    KHAN A.

    28^<th> International Symposium on Compound Semiconductors (ISCS2001), ThM-8, 2001

    Cited by (1)

  • <no title>

    HAN J.

    Appl.Phys.Lett. 73, 1688, 1998

    Cited by (8)

  • 特集'注目の光材料と素子への応用'

    平山秀樹

    オプトロニクス 10, 145-151, 2000

    Cited by (1)

  • <no title>

    HIRAYAMA H.

    Physica Status Solidi A 180, 157, 2000

    Cited by (1)

  • <no title>

    NARUKAWA Y.

    Appl. Phys. Lett. 70, 891, 1997

    Cited by (4)

  • <no title>

    CHICHIBU S.

    Appl.Phys.Lett. 70, 2822, 1997

    Cited by (20)

  • <no title>

    IWAI S.

    International Workshop on Nitride Semiconductors (IWN'2000), TA4-5, 2000

    Cited by (2)

  • High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

    TADATOMO Kazuyuki , OGAWA Hiroaki , OHUCHI Youichiro , TSUNEKAWA Takashi , IMADA Yoshiyuki , KATO Munehiro , TAGUCHI Tsunemasa

    Japanese Journal of Applied Physics Pt. 2 Letters 40(6), L583-L585, 2001-06-01

    References (18) Cited by (31)

Cited by:  2

Codes

  • NII Article ID (NAID)
    10008807982
  • NII NACSIS-CAT ID (NCID)
    AN00255326
  • Text Lang
    JPN
  • Article Type
    Journal Article
  • ISSN
    03870200
  • NDL Article ID
    6187734
  • NDL Source Classification
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL Call No.
    Z16-1040
  • Data Source
    CJP  CJPref  NDL 
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