Fabrication of HTSC Single Crystalline Thin Films by Tri-Phase Epitaxy

• Takahashi Ryota

  Frontier Collaborative Research Center, Tokyo Institute of Technology

• Yun Kyung Sung

  Frontier Collaborative Research Center, Tokyo Institute of Technology

• Matsumoto Yuji

  Materials and Structures Laboratory, Tokyo Institute of Technology

• Kawasaki M.

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology Institute of Material Research, Tohoku University Combinatorial Materials Exploration and Technology

• Chikyow Toyohiro

  National Institute for Materials Science Combinatorial Materials Exploration and Technology

• Koinuma Hideomi

  Frontier Collaborative Research Center, Tokyo Institute of Technology Materials and Structures Laboratory, Tokyo Institute of Technology Combinatorial Materials Exploration and Technology CREST-Japan Science Technology Corporation

Bibliographic Information

Other Title

• Tri-Phase Epitaxyによる高温超伝導，単結晶薄膜の作製
• Tri Phase Epitaxy ニ ヨル コウオン チョウデンドウ タンケッショウ ハクマク ノ サクセイ

Abstract

A high-Tc superconducting (HTSC) thin film with single crystal quality and atomically flat surface is a basic requirement for the fabrication of HTSC electronic devices. Despite extensive effort since the discovery of high-Tc superconductivity, this requirement has not been fully satisfied yet. Based on our experience on HTSC thin film growth, we proposed a novel fabricating method of single crystal RBa₂Cu₃O_7−δ(R=Y, Nd) thin films that are free from grain boundaries and have atomic scale surface smoothness. This method was devised in view of the thermodynamic phase diagram of RBa₂Cu₃O_7−δ and the characteristics of vapor phase epitaxy (VPE). Since gas, liquid and solid phases are involved in this film growth, it is denoted Tri-Phase Epitaxy(TPE). Giant single crystal grains, verified by X-ray diffraction and transmission electron microscopy (TEM), should provide a big advantage for the use of these films in such applications as high frequency transmission lines and superconducting tunnel junctions.

Journal

• Journal of the Japan Institute of Metals and Materials

  Journal of the Japan Institute of Metals and Materials 66 (4), 284-288, 2002

  The Japan Institute of Metals and Materials

Keywords

• tri-phase epitaxy
• YBa<SUB>2</SUB>Cu<SUB>3</SUB>O<SUB>7−δ</SUB>
• NdBa<SUB>2</SUB>Cu<SUB>3</SUB>O<SUB>7−δ</SUB>
• pulsed laser deposition

Details

• CRID: 1390282681468738688
• NII Article ID: 10008832481
• NII Book ID: AN00187860
• DOI: 10.2320/jinstmet1952.66.4_284
• ISSN: 18806880
• ISSN: 24337501
• ISSN: 00214876
• NDL BIB ID: 6151459
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6151459
• Web Site: https://www.jstage.jst.go.jp/article/jinstmet1952/66/4/66_4_284/_pdf
• Data Source:
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  • NDL
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  • CiNii Articles
• Abstract License Flag: Disallowed