Low Voltage and Low Power Design for NAND Flash Memory

• Sakui Koji

  NAND System & Card Group, Flash Memory Department, Memory Division, TOSHIBA Corporation Semiconductor Company

Bibliographic Information

Other Title

• エネルギーの有効利用と材料　　目指せ高効率！減らせ消費電力！　　ＮＡＮＤ型フラッシュメモリの低電圧化，低消費電力化

Journal

• Materia Japan

  Materia Japan 41 (2), 90-96, 2002

  The Japan Institute of Metals and Materials

Keywords

• NAND flash memory
• flash memory
• FN tunneling current
• floating gate
• control gate

Details

• CRID: 1390282679030644864
• NII Article ID: 10008836593
• NII Book ID: AN10433227
• DOI: 10.2320/materia.41.90
• ISSN: 18845843
• ISSN: 13402625
• Web Site: https://www.jstage.jst.go.jp/article/materia1994/41/2/41_2_90/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles