NAND 型フラッシュメモリの低電圧化, 低消費電力化  [in Japanese] Low Voltage and Low Power Design for NAND Flash Memory  [in Japanese]

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Author(s)

    • 作井 康司 SAKUI Koji
    • 東芝株式会社セミコンダクター杜メモリ事業部 NAND System & Card Group, Flash Memory Department Memory Division, TOSHIBA Corporation Semiconductor Company

Journal

  • Materia Japan

    Materia Japan 41(2), 90-96, 2002-02-20

    The Japan Institute of Metals and Materials

References:  10

Codes

  • NII Article ID (NAID)
    10008836593
  • NII NACSIS-CAT ID (NCID)
    AN10433227
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    13402625
  • Data Source
    CJP  J-STAGE 
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