吸引方式を用いた光散乱法によるプラズマ CVD 中の real-time 粒子測定  [in Japanese] Real-time Particle Measurement in Plasma Enfanced Chemical Vapor Deposition Using a Suction Sampling and Light Scattering Method  [in Japanese]

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Author(s)

Abstract

Monitoring of particles generated in a process chamber is one of the effective means to control the semiconductor manufacturing process. A sampling probe is inserted into the process chamber during the reaction in order to monitor the particles generated by plasma enhanced chemical vapor deposition (PECVD) with a light scattering particle sensor. As a result, it is found that the factors such as plasma power, discharge time, process pressure, and material gas flow rate significantly influence the number of particles generated in the chamber. It is also shown that the particle size distribution varies drastically by the particle coagulation and that PECVD with modulation discharge plasma is effective in controlling gas phase particle generation without lowering the deposition rate.

Journal

  • Earozoru Kenkyu

    Earozoru Kenkyu 17(2), 122-127, 2002-06-20

    Japan Association of Aerosol Science and Technology

References:  10

Cited by:  1

Codes

  • NII Article ID (NAID)
    10008837148
  • NII NACSIS-CAT ID (NCID)
    AN10041511
  • Text Lang
    JPN
  • Article Type
    Journal Article
  • ISSN
    09122834
  • NDL Article ID
    6193573
  • NDL Call No.
    Z17-1062
  • Data Source
    CJP  CJPref  NDL  J-STAGE 
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