埋め込みp層を有したAlGaN/GaN HEMTの作製と評価  [in Japanese] Fabrication and characterizations of AlGaN/GaN HEMTs with a buried p-layer  [in Japanese]

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Journal

  • The Transactions of the Institute of Electrical Engineers of Japan. C

    The Transactions of the Institute of Electrical Engineers of Japan. C 122(7), 1085-1088, 2002-07-01

    電気学会

References:  9

Codes

  • NII Article ID (NAID)
    10008844188
  • NII NACSIS-CAT ID (NCID)
    AN10065950
  • Text Lang
    JPN
  • Article Type
    ART
  • ISSN
    03854221
  • NDL Article ID
    6204482
  • NDL Source Classification
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL Call No.
    Z16-795
  • Data Source
    CJP  NDL 
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