シリコンデバイスにおける微少リークパスの FIB/TEM による解析  [in Japanese] Nano-scale Defect Analysis of Gate Leak in Semiconductor Device by FIB and TEM  [in Japanese]

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Author(s)

Journal

  • Materia Japan

    Materia Japan 40(12), 994, 2001-12-20

    The Japan Institute of Metals and Materials

References:  3

  • <no title>

    YOUNG R.

    Mat. Res. Soc. Symp. Proc. 199, 205, 1990

    Cited by (1)

  • <no title>

    KATO N. I.

    Material Science in Semiconductor Processing 4, 113, 2001

    Cited by (1)

  • <no title>

    KATO N. I.

    J. Vac. Sci. Technol. A16, 1127, 1998

    Cited by (1)

Codes

  • NII Article ID (NAID)
    10008847765
  • NII NACSIS-CAT ID (NCID)
    AN10433227
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    13402625
  • Data Source
    CJP  J-STAGE 
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