Nano-scale Defect Analysis of Gate Leak in Semiconductor Device by FIB and TEM

• Kato Naoko

  Reliability and Material Engineering, ITES Co., Ltd.

• Matsuzawa Juichi

  Reliability and Material Engineering, ITES Co., Ltd.

• Kohno Yoshiteru

  Yasu Semiconductor

• Saka Hiroyasu

  Department of Quantum Engineering, Nagoya University

Bibliographic Information

Other Title

• シリコンデバイスにおける微少リークパスのFIB/TEMによる解析

Journal

• Materia Japan

  Materia Japan 40 (12), 994-994, 2001

  The Japan Institute of Metals and Materials

Keywords

• silicon dioxide
• silicon
• gate pinhole
• gate dielectric
• semiconductor

Details

• CRID: 1390282679055916672
• NII Article ID: 10008847765
• NII Book ID: AN10433227
• DOI: 10.2320/materia.40.994
• ISSN: 18845843
• ISSN: 13402625
• Web Site: https://www.jstage.jst.go.jp/article/materia1994/40/12/40_12_994/_pdf
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles