Si 基板上の Al 膜配向性がショットキー特性に及ぼす影響  [in Japanese] Relation between Schottky Barrier height and Crystalline Alignment of Al Films on Si Substrates  [in Japanese]

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Author(s)

Journal

  • Materia Japan

    Materia Japan 40(12), 998, 2001-12-20

    The Japan Institute of Metals and Materials

References:  3

  • <no title>

    MIURA Y.

    Appl. Phys. Lett. 62, 1751, 1993

    Cited by (4)

  • <no title>

    MIURA Y.

    Phys. Rev. B50, 4893, 1994

    Cited by (1)

  • <no title>

    MIURA Y.

    表面化学 15(9), 33, 1994

    Cited by (1)

Codes

  • NII Article ID (NAID)
    10008847777
  • NII NACSIS-CAT ID (NCID)
    AN10433227
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    13402625
  • Data Source
    CJP  J-STAGE 
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