Co/中間層/(100)Si 構造における直接エピ CoSi_2 形成  [in Japanese] Direct Epi-CoSi_2 Formation from Co/intermediate Layer/(100) Si  [in Japanese]

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Author(s)

    • 小川 真一 OGAWA Shinichi
    • 松下電器産業株式会社半導体社プロセス開発センター Semiconductor Company, Matsushita Electric. md. Co. Ltd.

Journal

  • Materia Japan

    Materia Japan 40(12), 999, 2001-12-20

    The Japan Institute of Metals and Materials

References:  1

  • <no title>

    OGAWA S.

    Mat. Res. Soc. Symp. Proc 320, 355-360, 1994

    Cited by (1)

Codes

  • NII Article ID (NAID)
    10008847781
  • NII NACSIS-CAT ID (NCID)
    AN10433227
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    13402625
  • Data Source
    CJP  J-STAGE 
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