高電圧SEMによるLSIデバイスの3次元観察  [in Japanese] 3D Observation of LSI Device by Hight Voltage SEM  [in Japanese]

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Author(s)

Journal

  • Materia Japan

    Materia Japan 40(12), 1001, 2001-12-20

    The Japan Institute of Metals and Materials

Codes

  • NII Article ID (NAID)
    10008847786
  • NII NACSIS-CAT ID (NCID)
    AN10433227
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    13402625
  • Data Source
    CJP  J-STAGE 
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