選択横方向エピタキシャル成長により形成した GaN 膜中の転位構造  [in Japanese] Dislocation Structures in GaN Films Formed by Facet-initiated Epitaxial Lateral Overgrowth  [in Japanese]

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Author(s)

    • 酒井 朗 SAKAI Akira
    • 名古屋大学大学院工学研究科 Department of Crystaline Materials Science, Graduate School of Engineering, Nagoya University

Journal

  • Materia Japan

    Materia Japan 40(12), 1008, 2001-12-20

    The Japan Institute of Metals and Materials

References:  2

Codes

  • NII Article ID (NAID)
    10008847807
  • NII NACSIS-CAT ID (NCID)
    AN10433227
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    13402625
  • Data Source
    CJP  J-STAGE 
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