アンチサーファクタントによる GaN 層の低転位化  [in Japanese] Reduction of Threading Dislocation Density in GaN Films by Antisurfactant-mediated Epitaxy  [in Japanese]

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Author(s)

Journal

  • Materia Japan

    Materia Japan 40(12), 1009, 2001-12-20

    The Japan Institute of Metals and Materials

References:  1

  • <no title>

    TANAKA S.

    Jpn. J. Appl. Phys. 39, L831, 2000

    Cited by (11)

Codes

  • NII Article ID (NAID)
    10008847810
  • NII NACSIS-CAT ID (NCID)
    AN10433227
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    13402625
  • Data Source
    CJP  J-STAGE 
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