GSMBE で成長させた GaN/GaAs(111)の積層構造  [in Japanese] Stacking Structure in GaN Grown by GSMBE Method on GaAs(111)  [in Japanese]

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Author(s)

    • 桑野 範之 KUWANO Noriyuki
    • 九州大学先端科学技術共同研究センター Advanced Science and Technology Center for Cooperative Reserach, Kyusu University

Journal

  • Materia Japan

    Materia Japan 40(12), 1010, 2001-12-20

    The Japan Institute of Metals and Materials

References:  2

Codes

  • NII Article ID (NAID)
    10008847812
  • NII NACSIS-CAT ID (NCID)
    AN10433227
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    13402625
  • Data Source
    CJP  J-STAGE 
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