シリコンの表面マイグレーションを利用した大面積SON(Silicon on Noting)の形成  [in Japanese] Formation of SON (silicon on noting) structure using surface migration of silicon atoms  [in Japanese]

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Author(s)

    • 水島 一郎 MIZUSHIMA Ichiro
    • (株)東芝セミコンダクター社プロセス技術推進センター Process & Manufacturing Engineering Center, Semiconductor Company,TOSHIBA Corporation
    • 佐藤 力 SATO Tsutomu
    • (株)東芝セミコンダクター社プロセス技術推進センター Process & Manufacturing Engineering Center, Semiconductor Company,TOSHIBA Corporation
    • 綱島 祥隆 TSUNASHIMA Yoshitaka
    • (株)東芝セミコンダクター社プロセス技術推進センター Process & Manufacturing Engineering Center, Semiconductor Company,TOSHIBA Corporation

Journal

  • 應用物理

    應用物理 69(10), 1187-1191, 2000-10-10

    応用物理学会

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Codes

  • NII Article ID (NAID)
    10008979111
  • NII NACSIS-CAT ID (NCID)
    AN00026679
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    03698009
  • NDL Article ID
    5497309
  • NDL Source Classification
    ZM17(科学技術--科学技術一般--力学・応用力学)
  • NDL Call No.
    Z15-243
  • Data Source
    CJP  NDL 
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