SiGe基板上ひずみシリコン結晶技術  [in Japanese] Strained silicon crystal on SiGe substrate  [in Japanese]

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Author(s)

    • 杉山 直治 SUGIYAMA Naoharu
    • (株)東芝・研究開発センター・LSI基盤技術ラボラトリー Advanced LSI Technology Laboratory, Corporate Research and Development Center,Toshiba Corporation

Journal

  • 應用物理

    應用物理 69(11), 1315-1319, 2000-11-10

    応用物理学会

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Codes

  • NII Article ID (NAID)
    10008979571
  • NII NACSIS-CAT ID (NCID)
    AN00026679
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    03698009
  • NDL Article ID
    5543791
  • NDL Source Classification
    ZM17(科学技術--科学技術一般--力学・応用力学)
  • NDL Call No.
    Z15-243
  • Data Source
    CJP  NDL 
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