AlAs選択酸化膜形成技術 [in Japanese] AlAs selective oxidation Process [in Japanese]
-
- 小山 二三夫 KOYAMA Fumio
- 東工大精研 Precision and Intelligence Laboratory, Tokyo lnstitute of Technology
-
- 西山 伸彦 NISHIYAMA Nobuhiko
- 東工大精研 Precision and Intelligence Laboratory, Tokyo lnstitute of Technology
-
- 荒井 昌和 ARAI Masakazu
- 東工大精研 Precision and Intelligence Laboratory, Tokyo lnstitute of Technology
-
- 伊賀 健一 IGA Kenichi
- 東工大精研 Precision and Intelligence Laboratory, Tokyo lnstitute of Technology
Search this Article
Author(s)
-
- 小山 二三夫 KOYAMA Fumio
- 東工大精研 Precision and Intelligence Laboratory, Tokyo lnstitute of Technology
-
- 西山 伸彦 NISHIYAMA Nobuhiko
- 東工大精研 Precision and Intelligence Laboratory, Tokyo lnstitute of Technology
-
- 荒井 昌和 ARAI Masakazu
- 東工大精研 Precision and Intelligence Laboratory, Tokyo lnstitute of Technology
-
- 伊賀 健一 IGA Kenichi
- 東工大精研 Precision and Intelligence Laboratory, Tokyo lnstitute of Technology
Journal
-
- 應用物理
-
應用物理 69(11), 1339-1340, 2000-11-10
References: 7
-
1
- <no title>
-
TSANG W. T.
Appl.Phys.Lett. 33, 426, 1978
Cited by (2)
-
2
- <no title>
-
DALLESASSE J. M.
Appl. Phys. Lett. 57, 2844, 1990
Cited by (7)
-
3
- <no title>
-
ARAI M.
Jpn.J.Appl.Phys. 39, 3468, 2000
Cited by (3)
-
4
- <no title>
-
AMANO T.
Electron.Lett. 36, 74, 2000
Cited by (5)
-
5
- Low threshold half-wave vertical-cavity lasers
-
HUFFAKER D. L.
Electron. Lett. 31, 1946, 1994
DOI Cited by (10)
-
6
- <no title>
-
OHNOKI N.
Jpn. J. Appl. Phys. 36, 148, 1997
DOI Cited by (1)
-
7
- Improvement of A1As Selective Oxidization Process for GaAs/Ga1As Vertical Cavity Surface Emitting Lasers and Their Single-Mode Lasing Characteristics [in Japanese]
-
TAKEUCHI Kenichiro , MATSUTANI Akihiro , KOYAMA Fumio , IGA Kenichi
The Transactions of the Institute of Electronics,Information and Communication Engineers. C 00083(00009), 904-907, 2000-09-25
References (4) Cited by (2)