強誘電体メモリーの基礎特性と今後の展開  [in Japanese] Basic characteristics of ferroelectric random access memory and its future application  [in Japanese]

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Author(s)

    • 國尾 武光 KUNIO Takemitsu
    • 日本電気(株)システムデバイス・基礎研究本部シリコンシステム研究所 Silicon Systems Research Laboratories, System Devices and Fundamental Research, NEC Corporation
    • 波田 博光 HADA Hiromitsu
    • 日本電気(株)システムデバイス・基礎研究本部シリコンシステム研究所 Silicon Systems Research Laboratories, System Devices and Fundamental Research, NEC Corporation

Journal

  • 應用物理

    應用物理 70(1), 74-78, 2001-01-10

    応用物理学会

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Cited by:  1

Codes

  • NII Article ID (NAID)
    10008980323
  • NII NACSIS-CAT ID (NCID)
    AN00026679
  • Text Lang
    JPN
  • Article Type
    Journal Article
  • ISSN
    03698009
  • NDL Article ID
    5608664
  • NDL Source Classification
    ZM17(科学技術--科学技術一般--力学・応用力学)
  • NDL Call No.
    Z15-243
  • Data Source
    CJP  CJPref  NDL 
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