書誌事項
- タイトル別名
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- Purification of the Process Environment in Atmospheric Pressure Plasma CVD System.
- タイキアツ プラズマ CVD システム ニ オケル プロセス フンイキ ノ セイジョウカ
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In the atmospheric pressure plasma CVD system, improvement of the process environment by utilizing the reactivity between SiH4 and H20 was examined. The cleaning gas containing He and SiH4 was circulated by the gas circulation system in heated condition, and H2O which remained in the process atmosphere was measured by APIMS (Atmospheric Pressure Ionization Mass Spectrometer). Hydrogenated amorphous silicon (a-Si:H) films were deposited by the atmospheric pressure plasma CVD before and after the SiH4 circulation cleaning. In order to evaluate the effectiveness of the SiH4 circulation cleaning, contaminations such as O, N and C were analyzed by SIMS (Secondary Ion Mass Spectroscopy). Furthermore, the photoconductivity and the dark conductivity were compared. The results showed that the H20 concentration in the process atmosphere drastically decreased by the SiH4 circulation, and the O content in the a-Si:H film decreased similarly. The O content in the film after the SiH4 circulation cleaning was 5×1018 /cm3, which value was as same as or less than that by the conventional plasma CVD technique. The dark conductivity decreased, and the electrical property was improved. It was because the O content in the film decreased by the SiH4 circulation cleaning.
収録刊行物
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- 精密工学会誌
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精密工学会誌 66 (11), 1802-1806, 2000
公益社団法人 精密工学会
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詳細情報 詳細情報について
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- CRID
- 1390282679774615808
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- NII論文ID
- 10009266980
- 110001372825
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- NII書誌ID
- AN1003250X
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- ISSN
- 1882675X
- 09120289
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- NDL書誌ID
- 5551392
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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