放電プラズマ焼結によるn型SiCの作製と熱電特性

• 北川 裕之

  島根大学総合理工学部物質科学科

• 角 直美

  島根大学総合理工学部物質科学科

• 野田 泰稔

  島根大学総合理工学部物質科学科

書誌事項

タイトル別名

• Thermoelectric Properties of n-type Silicon Carbides Prepared by Spark Plasma Sintering
• ホウデン プラズマ ショウケツ ニ ヨル nガタ SiC ノ サクセイ ト ネツデントクセイ

抄録

Preparation and thermoelectric properties of n-type SiC were studied. Nitrogen doping was performed by mixing 3-10 mass%Si₃N₄. The pellets were prepared by spark plasma sintering (SPS) at 2000°C. The crystal structure of every sintered material is cubic β-type and relative density was higher than 80%. All sintered materials showed n-type conduction and the carrier concentration increased with increasing Si₃N₄ concentration. Seebeck coefficient decreased and electrical conductivity increased with increasing Si₃N₄ concentration. Power factor was improved by the Si₃N₄ doping and the maximum power factor of 1.5×10⁻⁴ W/mK² was obtained for SiC-7 mass%Si₃N₄ at 700°C.

収録刊行物

• 日本金属学会誌

  日本金属学会誌 66 (3), 194-197, 2002

  公益社団法人 日本金属学会

キーワード

• silicon carbide
• thermoelectric material
• spark plasma sintering
• density
• Seebeck coefficient
• electrical conductivity

詳細情報

• CRID: 1390282681468718208
• NII論文ID: 10009395826
• NII書誌ID: AN00187860
• DOI: 10.2320/jinstmet1952.66.3_194
• ISSN: 18806880
• ISSN: 24337501
• ISSN: 00214876
• NDL書誌ID: 6115516
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6115516
• Web Site: https://www.jstage.jst.go.jp/article/jinstmet1952/66/3/66_3_194/_pdf
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可