NO2 Sensing Properties of WO3 Gate-fitted FET Device

• NAKATA Seiji

  Interdisciplinary Graduate School of Engineering Sciences, Kyushu University

• SHIMANOE Kengo

  Faculty of Engineering Sciences, Kyushu University

• MIURA Norio

  Advanced Science and Technology Center for Cooperative Research, Kyushu University

• YAMAZOE Noboru

  Faculty of Engineering Sciences, Kyushu University

書誌事項

タイトル別名

• NO₂ Sensing Properties of WO₃ Gate-fitted FET Device

抄録

A field effect transistor (FET) device fitted with a WO₃ layer over the gate area exhibited almost ideal FET behavior at 150 and 180°C in air containing various concentrations of NO₂. Under the conditions of fixed source-drain voltage (3.0 V) and fixed drain current (450 μA), the gate-source voltage (V_GS) was found to increase linearly with an increase in the logarithm of NO₂ concentration over the range of several tens to 700 ppb NO₂, proving its potentiality to work as an environmental NO₂ sensor. However the times of 90%-response and -recovery to switching-on and -off 50 ppb NO₂ were as long as 10 and 25 min even at 180°C, respectively. Cross sensitivity test revealed that the device was totally insensitive to CO₂, but rather sensitive to NO. Water vapor was found to give a serious disturbance to the device: The Vgs response to NO₂ as well as its dependence on NO₂ concentration changed with a change in relative humidity.

収録刊行物

• Electrochemistry

  Electrochemistry 71 (6), 503-507, 2003-06-05

  公益社団法人　電気化学会

キーワード

• NO₂
• WO₃
• FET
• Gas Sensor
• Environmental Monitoring

詳細情報

• CRID: 1390564238115579264
• NII論文ID: 10010478513
• NII書誌ID: AN00151637
• DOI: 10.5796/electrochemistry.71.503
• ISSN: 21862451
• ISSN: 13443542
• NDL書誌ID: 6611237
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6611237
• Web Site: https://www.jstage.jst.go.jp/article/electrochemistry/71/6/71_503/_pdf
• 本文言語コード: en
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• 抄録ライセンスフラグ: 使用可