Crystal Structure and Ferroelectric Property of Tungsten-substituted Bi₄Ti₃O₁₂Thin Films Prepared by Metal-Organic Chemical Vapor Deposition

• Sakai Tomohiro

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

• Watanabe Takayuki

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

• Osada Minoru

  PRESTO, Japan Science and Technology (JST)

• Kakihana Masato

  Materials and Structures Laboratory, Tokyo Institute of Technology

• Noguchi Yuji

  Institute of Industrial Science, University of Tokyo

• Miyayama Masaru

  Institute of Industrial Science, University of Tokyo

• Funakubo Hiroshi

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology

書誌事項

タイトル別名

• Crystal Structure and Ferroelectric Property of Tungsten-substituted Bi4Ti3O12 Thin Films Prepared by Metal-Organic Chemical Vapor Deposition

抄録

W-substituted Bi₄Ti₃O₁₂ (BIT), Bi₄(Ti_3−xW_x)O₁₂, films were prepared on (111)Pt/IrO₂/SiO₂/Si substrates at 600°C by metal-organic chemical vapor deposition (MOCVD). The degree of (117) orientation and the lattice spacing of 117 Bi₄(Ti_3−xW_x)O₁₂ increased with increasing W content up to x=0.25. Ferroelectricity was hardly observed in as-deposited films but confirmed in the films after annealing at 700°C. The coercive field (E_c) monotonically increased with increasing W content, but the remanent polarization (P_r) showed a maximum value at x=0.11. P_r and E_c of Bi₄(Ti_2.89W_0.11)O₁₂ thin film after heat treatment was 13 μC/cm² and 160 kV/cm, respectively. W-substituted films showed high fatigue resistance against continuous switching up to 8×10¹⁰ cycles. These results show that W substitution for BIT film is effective in improving the ferroelectricity.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 42 (5A), 2850-2852, 2003

  The Japan Society of Applied Physics

キーワード

• Bi<SUB>4</SUB>Ti<SUB>3</SUB>O<SUB>12</SUB>
• ferroelectricity
• substitution
• tungsten
• MOCVD

詳細情報

• CRID: 1390282681234046976
• NII論文ID: 130004530839
• NII論文ID: 10010716536
• NII論文ID: 210000053426
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.42.2850
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 6530944
• Web Site: http://id.ndl.go.jp/bib/6530944
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6530944
• Web Site: http://stacks.iop.org/1347-4065/42/i=5R/a=2850/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可