High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature.
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- Ujihara Toru
- Institute for Materials Research, Tohoku University
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- Obara Kazuo
- Institute for Materials Research, Tohoku University
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- Usami Noritaka
- Institute for Materials Research, Tohoku University
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- Fujiwara Kozo
- Institute for Materials Research, Tohoku University
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- Sazaki Gen
- Institute for Materials Research, Tohoku University
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- Shishido Toetsu
- Institute for Materials Research, Tohoku University
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- Nakajima Kazuo
- Institute for Materials Research, Tohoku University
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抄録
We investigated the effect of growth temperature on crystal quality of crystalline silicon layers grown by liquid phase epitaxy (LPE) with gold-bismuth binary alloy solvent. The electrical and structural properties were examined by means of minority-carrier lifetime measurement and micro-Raman scattering spectroscopy. Both electrical and structural qualities improve with decreasing growth temperature. In the present study, the lifetime of the silicon layer grown at the lowest temperature was higher than that of monocrystalline silicon substrate though the solvent includes gold which is a well-known strong recombination site. On the other hand, the structural quality of layers is inferior to that of the substrate even at the lowest growth temperature. Thus, the temperature dependence of lifetime was concluded to be mainly due to the reduction of the solubility of gold impurity in the layer rather than the improvement of structural quality.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 42 (3A), L217-L219, 2003
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206254366720
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- NII論文ID
- 210000054836
- 10010781885
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- NII書誌ID
- AA10650595
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6469514
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可