Near Band Edge Non-radiative Recombination of Si Single Crystal Investigated by Piezoelectric Photothermal Spectroscopy.

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  • Memon Aftab A.
    Department of Electrical and Electronic Engineering, Miyazaki University
  • Fukuyama Atsuhiko
    Department of Materials Science, Miyazaki University
  • Ikari Tetsuo
    Department of Electrical and Electronic Engineering, Miyazaki University

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Abstract

Piezoelectric photothermal spectroscopy (PPTS) measurements were conducted on p- and n-type silicon, ‹100› orientation samples. We showed that a PPTS signal bearing a lower energy edge around 1.048 eV at room temperature was due to band-to-band transitions with optical mode phonon (0.064 eV) absorption. Similarly, a signal bearing an edge above 1.19 eV, observed at temperature less than 200 K was due to band-to-band transitions involving the phonon emission. The two signals were observed in both p- and n-type samples. These results indicated that very low absorption coefficient in indirect semiconductor can be effectively observed by using the proposed PPTS technique. An additional signal bearing a broad peak around 1.18±0.01 eV at room temperature was also observed for both types of samples. We proposed that the broad-peak signal was due to surface states.

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