Ohmic Contact Formation for N-Type Diamond by Selective Doping

• Teraji Tokuyuki

  Department of Electrical Engineering, Graduate School of Engineering, Osaka University

• Katagiri Masayuki

  Advanced Materials Laboratory, National Institute for Materials Science

• Koizumi Satoshi

  Advanced Materials Laboratory, National Institute for Materials Science

• Ito Toshimichi

  Department of Electrical Engineering, Graduate School of Engineering, Osaka University

• Kanda Hisao

  Advanced Materials Laboratory, National Institute for Materials Science

抄録

Ohmic contacts with low contact resistivity were formed on phosphorus-doped n-type {111} diamond thin films grown by microwave-plasma chemical-vapor deposition. Heavily-doped diamond layers were selectively grown on a diamond substrate by covering a part of substrate surface with a titanium/gold layer. Gold contacts deposited directory on a lightly phosphorus-doped diamond showed a rectification characteristic, while those formed on the selectively grown, heavily doped diamond layers showed an Ohmic characteristic. The Ohmic property of contacts formed with the heavily doped layers was found to be independent of the metals. It is therefore concluded that the tunneling current dominates carrier transport at the interface between the metal and the heavily doped n-type diamond.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 42 (8A), L882-L884, 2003

  The Japan Society of Applied Physics

キーワード

• <I>n</I>-type diamond
• Ohmic contact
• selective growth
• heavily doping

詳細情報

• CRID: 1390282681231338368
• NII論文ID: 210000055069
• NII論文ID: 10011445178
• NII書誌ID: AA11906093
• DOI: 10.1143/jjap.42.l882
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 6629367
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6629367
• Web Site: http://stacks.iop.org/1347-4065/42/i=8A/a=L882/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可