Low-Temperature Growth of Au on H-Terminated Si(111): Instability of Hydrogen at the Au/Si Interface Revealed by Non-Destructive Ultra-Shallow H-Depth Profiling

• Wilde Markus

  Institute of Industrial Science, The University of Tokyo

• Fukutani Katsuyuki

  Institute of Industrial Science, The University of Tokyo

抄録

The initial stage of Au/Si(111)-interface formation has been investigated by hydrogen-specific ultra-shallow depth profiling using nuclear reaction analysis (NRA) via the ¹H(¹⁵N,αγ)¹²C reaction in grazing incidence, which achieves submonolayer depth resolution. Gold was deposited on the H-terminated Si(111)(1×1) substrate at 110 K to suppress Au-silicide formation known to occur at room temperature. The experimental NRA spectrum clearly rules out the prevalence of H at the Au/Si(111) interface, even though the reactive Au-Si segregation is inhibited at the low deposition temperature. Nevertheless only ∼30% of the initial H termination layer is desorbed upon deposition of 4.1 Å Au. The shading of the remaining H from the incident ¹⁵N ions by the Au film is analyzed with aid of NRA spectrum simulations, which allows estimating the average of the Au particle size distribution and for exclusion of layer-by-layer growth of Au independent from morphological information by surface-imaging.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 42 (7B), 4650-4654, 2003

  The Japan Society of Applied Physics

キーワード

• Gold
• silicon
• hydrogen
• interface
• depth profiling
• nuclear reaction analysis

詳細情報

• CRID: 1390282681232997504
• NII論文ID: 130004531120
• NII論文ID: 10011446083
• NII論文ID: 210000053870
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.42.4650
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 6629426
• Web Site: http://id.ndl.go.jp/bib/6629426
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6629426
• Web Site: http://stacks.iop.org/1347-4065/42/i=7S/a=4650/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可