Evaluation of Band-Gap Energies and Characterization of Nonradiative Recombination Centers of Film and Bulk GaN Crystals

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Abstract

We have measured photothermal spectra of bulk and film GaN crystals by the photothermal divergence (PTD) method in the temperature range from 110 K to 320 K. The band-gap energy of the GaN film grown by metalorganic chemical vapor deposition (MOCVD) method on a sapphire substrate shifts toward a higher energy because of the stress, compared with that of the bulk GaN grown by hydride vapor-phase epitaxy (HVPE) method. Moreover, the dependence of the PTD signal intensity, <I>I</I><SUB>PTD</SUB>, on the doping has been observed. From <I>I</I><SUB>PTD</SUB> spectra, we have found that a doping procedure may induce the degradation of the crystalline quality of GaN. For the bulk, two peaks in the energy region below the band edge have been observed in the <I>I</I><SUB>PTD</SUB> spectra, and it has been found that such peaks may originate in nonradiative recombination centers. The two peaks have been characterized to be related to deep levels observed previously by means of the so-called deep-level transient-scan method.

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 42(8), 4905-4908, 2003-08-15

    The Japan Society of Applied Physics

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Codes

  • NII Article ID (NAID)
    10011447219
  • NII NACSIS-CAT ID (NCID)
    AA10457675
  • Text Lang
    ENG
  • Article Type
    ART
  • Journal Type
    大学紀要
  • ISSN
    00214922
  • NDL Article ID
    6652787
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z53-A375
  • Data Source
    CJP  NDL  J-STAGE 
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