GaNAs as Strain Compensating Layer for 1.55μm Light Emission from InAs Quantum Dots

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  • Ganapathy Sasikala
    Research Institute for Electronic Science, Hokkaido University CREST, Japan Science and Technology Corporation
  • Zhang Xi Qing
    Research Institute for Electronic Science, Hokkaido University
  • Suemune Ikuo
    Research Institute for Electronic Science, Hokkaido University CREST, Japan Science and Technology Corporation
  • Uesugi Katsuhiro
    Research Institute for Electronic Science, Hokkaido University
  • Kumano Hidekazu
    Research Institute for Electronic Science, Hokkaido University
  • Kim B. J.
    Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute of Science and Technology
  • Seong Tae-Yeon
    Centre for Frontier Materials and Department of Material Science and Engineering, Kwangju Institute of Science and Technology

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タイトル別名
  • GaNAs as Strain Compensating Layer for 1.55 .MU.m Light Emission from InAs Quantum Dots
  • GaNAs as Strain Compensating Layer for 1 55マイクロm Light Emission from InAs Quantum Dots

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抄録

GaNAs strain-compensating layers (SCLs) are applied to bury InAs quantum dots (QDs) grown on GaAs substrates. The main idea is the compensation of the compressive strain induced by InAs QDs with the tensile strain in the GaNAs SCLs to keep the total strain of the system minimum. The application of the GaNAs SCLs resulted in a systematic shift of photoluminescence (PL) peaks of the InAs QDs toward the longer wavelengths with the increase of the nitrogen (N) composition in GaNAs, and luminescence at a wavelength of 1.55 μm has been achieved from the InAs QDs for the N composition of 2.7% in the GaNAs SCL. This result is promising for the application of GaNAs SCL for InAs-QDs-based long-wavelength light sources for optical-fiber communication systems.

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