Growth of Be-doped p-type GaN under Invariant Polarity Conditions

• SUGITA Shigenobu

  School of Science and Engineering, Waseda University Kagami Memorial Laboratory for Materials Science and Technology, Waseda University

• WATARI Yasumasa

  School of Science and Engineering, Waseda University Kagami Memorial Laboratory for Materials Science and Technology, Waseda University

• YOSHIZAWA Ginga

  School of Science and Engineering, Waseda University Kagami Memorial Laboratory for Materials Science and Technology, Waseda University

• SODESAWA Jun

  School of Science and Engineering, Waseda University Kagami Memorial Laboratory for Materials Science and Technology, Waseda University

• YAMAMIZU Hiroshi

  School of Science and Engineering, Waseda University Kagami Memorial Laboratory for Materials Science and Technology, Waseda University

• HORIKOSHI Yoshiji

  School of Science and Engineering, Waseda University Kagami Memorial Laboratory for Materials Science and Technology, Waseda University

Bibliographic Information

Other Title

• 極性制御によるBeドープp型GaNの成長
• キョクセイ セイギョ ニ ヨル Be ドープ pガタ GaN ノ セイチョウ

Abstract

We have successfully grown Be-doped p-type GaN on an Al₂O₃(0001) substrate by RF-MBE by conserving the surface polarity during growth. It is found that the surface polarity of undoped GaN grown on Al₂O₃(0001) substrate is N-terminated, but the polarity changes from N to Ga during growth when Be-doping is performed. This polarity change results in extremely high resistivity of the grown layer and the defect level centered at approximately 2.0 eV appears prominently. By using the AlN buffer layer, GaN layer can be grown under the Ga-terminated condition from the beginning. By growing Be-doped GaN on the Ga-terminated GaN, we have successfully grown Be-doped p-type GaN without inducing polarity change. In addition, the optical property of the sample is dramatically improved. We have confirmed that the Be acceptor level is shallower than that of the Mg by approximately 100 meV.

Journal

• Hyomen Kagaku

  Hyomen Kagaku 24 (9), 538-542, 2003

  The Surface Science Society of Japan

Details

• CRID: 1390001206459022464
• NII Article ID: 10011735137
• NII Book ID: AN00334149
• DOI: 10.1380/jsssj.24.538
• COI: 1:CAS:528:DC%2BD3sXptVCltr8%3D
• ISSN: 18814743
• ISSN: 03885321
• NDL BIB ID: 6685202
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6685202
• Web Site: https://www.jstage.jst.go.jp/article/jsssj/24/9/24_9_538/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed