Preparation and Characterization of Liquid-Sintered CaS

  • HIRAKAWA Toshihiro
    Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University
  • IWASAKI Minehito
    Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University
  • TAKEBE Hiromichi
    Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University
  • MORINAGA Kenji
    Department of Applied Science for Electronics and Materials, Graduate School of Engineering Sciences, Kyushu University

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Other Title
  • CaS焼結体の作製とキャラクタリゼーション
  • CaS ショウケツタイ ノ サクセイ ト キャラクタリゼーション

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Abstract

Dense CaS ceramics were prepared by liquid-phase sintering with Ga2S3 additives (0 ∼ 1.0 mol%). A relative density of 96.2% was achieved by the sintering of CaS samples with 0.5mol% Ga2S3, fired at 1573K for 6h in Ar flow. Sintering process was investigated with scanning electron microscopy observations and linear shrinkage measurements. The sintering process of Ga2S3-doped CaS was found to be followed by 3 steps: (1) the rearrangement of CaS particles by CaS-Ga2S3 liquid, (2) the dissolution of CaS particles and the precipitation of CaS grains due to diffusion-controlled process and (3) the growth of precipitated CaS grains. X-ray diffraction and microstructural analyses with an energy dispersive X-ray fluorescence spectrometer revealed that sintered CaS has mainly CaS phase and CaS-Ga2S3 liquid segregated around grain boundaries. The thermal expansion coefficient of sintered CaS was 19.1 × 10-6/K in the range room temperature to 1273K. It was suggested that ceramic materials with similar thermal expansion coefficients are appropriate for the substrate of CaS based thin film electroluminescence.

Journal

  • Shigen-to-Sozai

    Shigen-to-Sozai 119 (12), 755-758, 2003

    The Mining and Materials Processing Institute of Japan

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