Reduction of Carbon Impurity in Silicon Nitride Films Deposited from Metalorganic Source

• Taguchi Kohshi

  Department of Electronics and Information Science, Kyoto Institute of Technology SAKIGAKE-Semiconductor Co., in Cooperative Research Center, Kyoto Institute of Technology

• Yoshimoto Masahiro

  Department of Electronics and Information Science, Kyoto Institute of Technology

• Saraie Junji

  Department of Electronics and Information Science, Kyoto Institute of Technology

抄録

Silicon nitride (SiN_x) film has been deposited at a substrate temperature in the range of 200–800°C by a new radical-beam deposition technique. In the new technique, hexamethyldisilazane is decomposed not in plasma directly, but in a reaction with atomic nitrogen, in order to reduce carbon concentration into the film. The carbon concentration of the film is estimated to be of the order of 10¹⁹ cm⁻³ at most, based on secondary ion mass spectroscopy. The resistivity and the dielectric constant of the film are evaluated to be ∼10¹³ Ω·cm at 3 MV/cm and 5.7 at 300 kHz, respectively, which makes the film quality comparable to that of SiN_x films deposited by plasma chemical vapor deposition.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (2A), L148-L150, 2004

  The Japan Society of Applied Physics

キーワード

• silicon nitride
• radical beam deposition
• hexamethyldisilazane
• atomic nitrogen
• carbon concentration
• SIMS

詳細情報

• CRID: 1390001206264625408
• NII論文ID: 210000057057
• NII論文ID: 10012038860
• NII書誌ID: AA11906093
• DOI: 10.1143/jjap.43.l148
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 6849280
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6849280
• Web Site: http://stacks.iop.org/1347-4065/43/i=2A/a=L148/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可