Submicron-Scale Photoluminescence of InGaN/GaN Probed by Confocal Scanning Laser Microscopy

• Okamoto Koichi

  Department of Electronic Science and Engineering, Kyoto University

• Choi Jungkwon

  Department of Chemistry, Graduate School of Science, Kyoto University

• Kawakami Yoichi

  Department of Electronic Science and Engineering, Kyoto University

• Terazima Masahide

  Department of Chemistry, Graduate School of Science, Kyoto University

• Mukai Takashi

  Nitride Semiconductor Research Laboratory, Nichia Corporation

• Fujita Shigeo

  Department of Electronic Science and Engineering, Kyoto University

抄録

Confocal scanning laser microscopy was used for the first time to obtain the submicron-scale photoluminescence (PL) of InGaN/GaN single quantum wells (SQWs). We found island-shaped spatial inhomogeneities of both PL intensities and spectra as small as 100-200 nm. The spatial resolution of the obtained PL images was much smaller than the diffusion length of carriers in active layers at room temperature.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (2), 839-840, 2004

  The Japan Society of Applied Physics

キーワード

• confocal scanning laser microscopy
• photoluminescence
• InGaN/GaN
• light emitting diode
• quantum well
• spatial inhomogeneity

詳細情報

• CRID: 1390282681240533632
• NII論文ID: 10012041146
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.43.839
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/43/i=2R/a=839/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可