Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion-Implantation

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Defect formation in (100) GaSb by 60 keV Sn<SUP>+</SUP> ion-implantation at 150–153 K is investigated using cross-sectional TEM, SEM and EDX. An anomalous structure consisting of many cells, which looks like a honey comb, was formed on the surface implanted with 8.9×10<SUP>18</SUP> ions/m<SUP>2</SUP>. The diameter and the depth of a cell were about 50 nm and 220–250 nm respectively. The thickness of the walls partitioning the cells was about 10 nm. The upper part of the partitioning wall is amorphous and rich in Ga, while the lower part shows crystalline structure. A heavily strained region of 50 nm thickness, corresponding to the maximum depth of the projected Sn ions, was observed under the cells. This defect structure is compared with similar defects which have been observed in ion-implanted GaSb. The defect formation mechanism is discussed, and an explanation based on movement of the implantation induced point defects is proposed. It is assumed that hills and hollows are formed in the early stage of implantation. The point defects created on the hills do not contribute to the development of the defect structure, because they annihilate almost completely by the recombination of vacancy and interstitial and by the movement to the near surface sink. However, under the hollows, vacancies which escaped recombination remain, and the interstitial atoms, which are highly mobile at low temperatures, migrate far from there to aggregate under the hills. The hollows become deeper by the movement of the remaining vacancies to the surface, and the hills develop into the walls by the migration of the interstitial atoms from the surrounding hollows.

収録刊行物

  • Materials transactions

    Materials transactions 43(4), 674-680, 2002-04-01

    日本金属学会

参考文献:  17件中 1-17件 を表示

  • <no title>

    TANIWAKI M.

    Defect Diffus. Forum 95-98, 989-994, 1993

    被引用文献2件

  • <no title>

    HOMMA Y.

    J. Vac. Sci. Technol. A 5, 321-326, 1987

    被引用文献1件

  • <no title>

    TANIWAKI M.

    Proc. Int. Corf. On Solid-Solid Phase Transformations '99, 425-428, 1999

    被引用文献2件

  • <no title>

    FRANK F. C.

    Phil. Mag. 44, 854-860, 1953

    被引用文献2件

  • <no title>

    MAZEY D. J.

    Radiation Effects 1, 229-239, 1969

    DOI 被引用文献2件

  • <no title>

    SADANA D. K.

    Nucl. Instrum. Methods Phys. Res. B 7-8, 375-386, 1985

    DOI 被引用文献1件

  • <no title>

    TANIWAKI M.

    J. Appl. Phys. 67, 4036-4041, 1990

    被引用文献3件

  • <no title>

    TANIWAKI M.

    J. Non-Cryst. Solids 117-118, 745-748, 1990

    被引用文献2件

  • <no title>

    TANIWAKI M.

    J. Appl. Phys. 66, 161-164, 1989

    被引用文献2件

  • <no title>

    KLEITMAN D.

    Phys. Rev. 108, 901, 1957

    DOI 被引用文献4件

  • <no title>

    PEARTON S. J.

    J. Appl. Phys. 64, 629-636, 1988

    被引用文献2件

  • <no title>

    CALLEC R.

    Appl. Phys. Lett. 59, 1872-1874, 1991

    被引用文献3件

  • <no title>

    CALLEC R.

    J. Appl. Phys. 73, 4831-4835, 1993

    被引用文献4件

  • TRIM-transport of ions in matter

    BIERSACK J. P.

    Meth. Phys. Res. 174, 257, 1980

    被引用文献19件

  • <no title>

    WILSON I. H.

    J. Appl. Phys. 53, 1698-1705, 1982

    被引用文献5件

  • <no title>

    APPLETON B. R.

    Nucl. Instrum. Methods. Phys. Res. B 7-8, 639-644, 1985

    DOI 被引用文献1件

  • <no title>

    THOMMEN K.

    Phys. Rev. 174, 938-945, 1968

    DOI 被引用文献2件

被引用文献:  2件中 1-2件 を表示

各種コード

  • NII論文ID(NAID)
    10012322315
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    6263070
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  CJP引用  NDL  IR  J-STAGE 
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