Stability of Postannealed Silicon Dioxide Electret Thin Films Prepared by Magnetron Sputtering

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The effect of postannealing on surface potential stability was investigated for silicon dioxide (SiO<SUB>2</SUB>) electret thin films with a thickness of 2 to 5 \\micron. The SiO<SUB>2</SUB> films were prepared on Al-coated and uncoated Si substrates by r.f. magnetron sputtering using a fused quartz target. Subsequent to the sputter deposition, the SiO<SUB>2</SUB> films were postannealed in the deposition chamber in order to improve stability for use in a highly humid atmosphere. The obtained surface potential stability was dependent on not only the postannealing conditions but also the deposition conditions. The surface potential of SiO<SUB>2</SUB> films postannealed in an oxidizing atmosphere at 275 to 350°C for 10 to 60 min was found to be highly stable when tested at a relative humidity of 90% and a temperature of 60°C. In addition, the postannealed SiO<SUB>2</SUB> films were stable for use in air for a long term at room temperature.

収録刊行物

  • Materials transactions

    Materials transactions 43(5), 946-950, 2002-05-01

    公益社団法人 日本金属学会

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各種コード

  • NII論文ID(NAID)
    10012323124
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    6179842
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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