Hydrogen Implantation Effects on the Electrical and Optical Properties of Metal Nitride Thin Films

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Copper and Aluminum Nitride thin films were prepared by the reactive R. F. sputtering method with controlling the N<SUB>2</SUB> gas content. Their electrical resistivity and optical bandgap energy were varied as the content of N<SUB>2</SUB> gas during the deposition. For example, the electrical resistivity of the copper nitride thin films increased from 10<SUP>−1</SUP> to 10<SUP>1</SUP> Ωm as the nitride approaches to the stoichometric Cu<SUB>3</SUB>N. To modify the electrical and the optical properties of the nitride thin films, hydrogen was introduced by low energy ion implantation. The electrical resistivity of nearly stoichiometric Cu<SUB>3</SUB>N thin films decreased from 10<SUP>1</SUP> to 10<SUP>−4</SUP> Ωm after hydrogen ion implantation for 30 minutes because this treatment at even 3 keV formed many irradiation defects near the surface of the Cu<SUB>3</SUB>N thin films. On the other hand, the electrical and the optical properties of insulating AlN thin films were hardly modified with the 7 h implantation. But the electrical resistivity and the optical bandgap energy of the Al rich Al–N thin films could be increased by the hydrogen ion implantation.

収録刊行物

  • Materials transactions

    Materials transactions 43(5), 1138-1141, 2002-05-01

    公益社団法人 日本金属学会

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各種コード

  • NII論文ID(NAID)
    10012323663
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    6180403
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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