Influence of Substrate Bias Voltage on the Properties of Cu Thin Films by Sputter Type Ion Beam Deposition

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Cu thin films have been deposited on Si (100) substrate by using a non-mass-separated ion beam deposition (IBD) system. The effect of the substrate bias voltage on the properties of the deposited films was investigated using X-ray diffraction, resistivity measurement and field emission scanning electron microscopy. In the case of Cu thin films deposited without bias voltage, a columnar structure and small grains were observed distinctly, and the electrical resistivity of the deposited Cu films was very high. By increasing the bias voltage, no clear columnar structure and grain boundary were observed. The resistivity of Cu films decreased remarkably and at a bias voltage of −50 V, reaching a minimum value of 18±1 nΩm, which is close to that of the bulk phase (16.7 nΩm.)

収録刊行物

  • Materials transactions

    Materials transactions 43(6), 1403-1408, 2002-06-01

    公益社団法人 日本金属学会

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各種コード

  • NII論文ID(NAID)
    10012324583
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    6200846
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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