Structure Analysis of GaN Thin Film with Inversion Domains by High Voltage Atomic Resolution Microscopy

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抄録

The atomic structures and surface morphologies of three types of GaN films were investigated by high voltage atomic resolution microscopy (HVARM). By HVARM, each atomic column of Ga and N could clearly be resolved and the polarity of the film and inversion domains could be directly determined. The GaN film was grown on a sapphire substrate by molecular beam epitaxy (MBE) after nitridation of the sapphire surface. Inversion domains (IDs) crossed the whole film to the surface and made small pyramids on the surface. The small pyramids had Ga-polarity and the rest had N-polarity. A GaN film with In exposure during film growth had an almost Ga-polarity flat surface. In exposure process reduced the density of inversion domains that have a N-polarity. While a GaN film grown on an AlN buffer layer was unipolar, with a Ga-polarity. HVARM observation revealed that the density of the IDs determine the qualities and the polarity of the film.

収録刊行物

  • Materials transactions

    Materials transactions 43(7), 1542-1546, 2002-07-01

    公益社団法人 日本金属学会

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各種コード

  • NII論文ID(NAID)
    10012325097
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    6240361
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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