HVEM/AFM Observation of Hinge-Type Plastic Zones Associated with Cracks in Silicon Crystals

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Dislocation structures developed in hinge-type plastic zones associated with cracks in silicon crystals have been studied using a high voltage electron microscope (HVEM). Fine slip bands due to those dislocations have been also examined by an atomic force microscope (AFM). {100} and {110} cracks were introduced into {110} silicon wafers at room temperature by Vickers indentation method. The temperature of the wafer chips indented was raised to higher than 823 K to activate dislocations around crack tips under a residual stress due to the indentation. In specimens with the heat-treatment, prominent dislocation arrays corresponding to the hinge-type plastic zone were observed not only near the crack tip but also in the crack wake. AFM observations showed that very fine slip bands with the step height of a few nano-meters were formed with the regular spacing of a few microns. Based on the analyses of those dislocations and slip bands, it has been revealed that those dislocations were shielding-type increasing the fracture toughness.

収録刊行物

  • Materials transactions

    Materials transactions 43(9), 2169-2172, 2002-09-01

    公益社団法人 日本金属学会

参考文献:  8件中 1-8件 を表示

被引用文献:  4件中 1-4件 を表示

各種コード

  • NII論文ID(NAID)
    10012325859
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    6312520
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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